收藏本站
PD - 9.1673A
IRFIZ24E
HEXFET ? Power MOSFET
l Advanced Process Technology
l Isolated Package
l High Voltage Isolation = 2.5KVRMS ?
l Sink to Lead Creepage Dist. = 4.8mm
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial
applications. The moulding compound used provides
a high isolation capability and a low thermal resistance
G
D
S
V DSS = 60V
R DS(on) = 0.071 ?
I D = 14A
between the tab and external heatsink. This isolation
is equivalent to using a 100 micron mica barrier with
standard TO-220 product. The Fullpak is mounted to
a heatsink using a single clip or by a single screw
fixing.
Absolute Maximum Ratings
TO-220 FULLPAK
Parameter
Max.
Units
I D @ T C = 25°C
Continuous Drain Current, V GS @ 10V
14
I D @ T C = 100°C
I DM
P D @T C = 25°C
V GS
E AS
I AR
E AR
dv/dt
Continuous Drain Current, V GS @ 10V
Pulsed Drain Current ??
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ??
Avalanche Current ??
Repetitive Avalanche Energy ?
Peak Diode Recovery dv/dt ??
9.6
68
29
0.19
± 20
71
10
2.9
5.0
A
W
W/°C
V
mJ
A
mJ
V/ns
T J
T STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
-55 to + 175
300 (1.6mm from case )
10 lbf?in (1.1N?m)
°C
Thermal Resistance
Parameter
Typ.
Max.
Units
R θ JC
R θ JA
Junction-to-Case
Junction-to-Ambient
–––
–––
5.2
65
°C/W
9/22/97
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
IRFIZ34E MOSFET N-CH 60V 21A TO220FP
IRFIZ46NPBF MOSFET N-CH 55V 33A TO220FP
IRFIZ46N MOSFET N-CH 55V 33A TO220FP
IRFIZ48NPBF MOSFET N-CH 55V 40A TO220FP
IRFIZ48N MOSFET N-CH 55V 36A TO220FP
IRFL024NTR MOSFET N-CH 55V 2.8A SOT223
IRFL1006TR MOSFET N-CH 60V 1.6A SOT223
IRFL4105PBF MOSFET N-CH 55V 3.7A SOT223
相关代理商/技术参数
IRFIZ24EPBF 功能描述:MOSFET 60V 1 N-CH HEXFET 71mOhms 13.3nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRFIZ24G 功能描述:MOSFET N-Chan 60V 14 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRFIZ24G_09 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Power MOSFET
IRFIZ24GPBF 功能描述:MOSFET N-Chan 60V 14 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRFIZ24N 制造商:International Rectifier 功能描述:MOSFET N FULLPAK ((NW))
IRFIZ24NPBF 功能描述:MOSFET MOSFT 55V 13A 70mOhm 13.3nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRFIZ24V 制造商:IRF 制造商全称:International Rectifier 功能描述:Power MOSFET(Vdss=60V, Rds(on)=0.060ohm, Id=14A)
IRFIZ30 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 30A I(D) | TO-251VAR